medium power thyristors stud version 22ria series 1 22a bulletin i2403 rev. a 07/00 22ria 10 to 120 140 to 160 i t(av) 22 22 a @ t c 85 85 c i t(rms) 35 35 a i tsm @ 50hz 400 340 a @ 60hz 420 355 a i 2 t@ 50hz 793 575 a 2 s @ 60hz 724 525 a 2 s v drm /v rrm 100 to 1200 1400 to 1600 v t q typical 110 s t j - 65 to 125 c parameters units typical applications medium power switching phase control applications can be supplied to meet stringent military, aerospace and other high-reliability requirements major ratings and characteristics case style to-208aa (to-48) features improved glass passivation for high reliability and exceptional stability at high temperature high di/dt and dv/dt capabilities standard package low thermal resistance metric threads version available types up to 1600v v drm / v rrm www.irf.com
22ria series bulletin i2403 rev. a 07/00 2 www.irf.com voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage (1) repetitive peak voltage (2) @ t j = t j max. vvma 10 100 150 20 20 200 300 40 400 500 60 600 700 22ria 80 800 900 10 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 i t(av) max. average on-state current 22 22 a 180 sinusoidal conduction @ case temperature 85 85 c i t(rms) max. rms on-state current 35 35 a i tsm max. peak, one-cycle 400 340 a t = 10ms no voltage non-repetitive surge current 420 355 t = 8.3ms reapplied 335 285 t = 10ms 100% v rrm 355 300 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 793 575 a 2 s t = 10ms no voltage initial t j = t j max. 724 525 t = 8.3ms reapplied 560 405 t = 10ms 100% v rrm 515 370 t = 8.3ms rea pplied i 2 t maximum i 2 t for fusing 7930 5750 a 2 s t = 0.1 to 10ms, no voltage reapplied, t j = t j max. v t(to)1 low level value of threshold 0.83 1.01 v (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. voltage v t(to) 2 high level value of threshold 0.95 1.17 (i > x i t(av) ), t j = t j max. voltage r t1 low level value of on-state 14.9 12.24 m ? (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. slope resistance r t2 high level value of on-state 13.4 10.35 (i > x i t(av) ), t j = t j max. slope resistance v tm max. on-state voltage 1.70 --- v i pk = 70 a, t j = 25c --- 1.80 i h maximum holding current 130 ma t j = 25c. anode supply 6v, resistive load, i l latching current 200 22ria 10 to 120 140 to 160 parameter units conditions electrical specifications voltage ratings on-state conduction (1) units may be broken over non-repetitively in the off-state direction without damage, if di/dt does not exceed 20a/s (2) for voltage pulses with t p 5ms
22ria series bulletin i2403 rev. a 07/00 3 www.irf.com dv/dt max. critical rate of rise of 100 t j = t j max. linear to 100% rated v drm off-state voltage 300 (*) t j = t j max. linear to 67% rated v drm v/s parameter 22ria units conditions blocking p gm maximum peak gate power 8.0 t j = t j max. p g(av) maximum average gate power 2.0 i gm max. peak positive gate current 1.5 a t j = t j max. -v gm maximum peak negative 10 v t j = t j max. gate voltage i gt dc gate current required 90 t j = - 65c to trigger 60 ma t j = 25c 35 t j = 125c v gt dc gate voltage required 3.0 t j = - 65c to trigger 2.0 v t j = 25c 1.0 v t j = 125c i gd dc gate current not to trigger 2.0 ma t j = t j max., v drm = rated value v gd dc gate voltage not to trigger 0.2 v t j = t j max. v drm = rated value w max. required gate trigger current/ voltage are the lowest value which will trigger all units 6v anode-to- cathode applied max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied parameter 22ria units conditions triggering di/dt max. rate of rise of turned-on t j = t j max., v dm = rated v drm current v drm 600v 2 0 0 a/s gate pulse = 20v, 15 ? , t p = 6s, t r = 0.1s max. v drm 800v 180 i tm = (2x rated di/dt) a v drm 1000v 160 v drm 1600v 150 t gt typical turn-on time 0.9 t j = 25c, at = rated v drm /v rrm , t j = 125c t rr typical reverse recovery time 4 s t j = t j max., i tm = i t(av) , t p > 200s, di/dt = -10a/s t q typical turn-off time 110 t j = t j max., i tm = i t(av) , t p > 200s, v r = 100v, di/dt = -10a/s, dv/dt = 20v/s linear to 67% v drm , gate bias 0v-100w parameter 22ria units conditions switching (**) available with: dv/dt = 1000v/s, to complete code add s90 i.e. 22ria160s90. (*) t q = 10sup to 600v, t q = 30s up to 1600v available on special request.
22ria series bulletin i2403 rev. a 07/00 4 www.irf.com t j max. operating temperature range - 65 to 125 c t stg max. storage temperature range - 65 to 125 c r thjc max. thermal resistance, 0.86 k/w dc operation junction to case r thcs max. thermal resistance, 0.35 k/w mounting surface, smooth, flat and greased case to heatsink t mounting torque to nut to device 20(27.5) 25 lbf-in lubricated threads 0.23(0.32) 0.29 kgf.m (non-lubricated threads) 2.3(3.1) 2.8 nm case style to-208aa (to-48) see outline table parameter 22ria units conditions thermal and mechanical specification ? r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 180 0.21 0.15 k/w t j = t j max. 120 0.25 0.25 90 0.31 0.34 60 0.45 0.47 30 0.76 0.76 conduction angle sinusoidal conduction rectangular conduction units conditions ordering information table 1 22 ria 160 m s90 device code 4 3 2 1 - current code 2 - essential part number 3 - voltage code: code x 10 = v rrm (see voltage rating table) 4 - none = stud base to-208aa (to-48) 1/4" 28unf-2a m = stud base to-208aa (to-48) m6 x 1 5 - critical dv/dt: none = 300v/s (standard value) s90 = 1000v/s (special selection) 5 wt approximate weight 14 (0.49) g (oz)
22ria series bulletin i2403 rev. a 07/00 5 www.irf.com outline table fig. 1 - current ratings characteristic fig. 2 - current ratings characteristic case style to-208aa (to-48) all dimensions in millimeters (inches) 80 90 100 110 120 130 0 5 10 15 20 25 30 60 90 120 180 average on-state current (a) maximum allowabl e case temperature (c) conduction angle 22ria series (100 to 1200v) r (dc) = 0.86 k/w thjc 80 90 100 110 120 130 0 10203040 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 22ria series (100 to 1200v) r (dc) = 0.86 k/w thjc
22ria series bulletin i2403 rev. a 07/00 6 www.irf.com fig. 3 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 4 - on-state power loss characteristics 0 25 50 75 100 125 maximum allowable ambient temperature (c) r = 1 k / w - d e l t a r t h s a 2 k / w 3 k / w 4 k / w 5 k / w 7 k / w 1 0 k / w 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) 22ria series (100 to 1200v) t = 125c j 0 25 50 75 100 125 maximum allowable ambient temperature (c) 1 0 k / w 7 k / w 5 k / w 4 k / w 3 k / w 2 k / w r = 1 k / w - d e l t a r t h s a 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 22ria series (100 to 1200v) t = 125c j 150 175 200 225 250 275 300 325 350 375 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) 22ria series (100 to 1200v) initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm 150 175 200 225 250 275 300 325 350 375 400 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reappli ed rated v reapplied rrm j 22ria series (100 to 1200v)
22ria series bulletin i2403 rev. a 07/00 7 www.irf.com fig. 7 - forward voltage drop characteristics fig. 9 - current ratings characteristics fig. 8 - current ratings characteristics 1 10 100 1000 0.5 1 1.5 2 2.5 3 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j 22ria series (100 to 1200v) 80 90 100 110 120 130 0 5 10 15 20 2 5 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction angle 22ria series (1400 to 1600v) r (dc) = 0.86 k/w thjc 80 90 100 110 120 130 0 10203040 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 22ria series (1400 to 1600v) r (dc) = 0.86 k/w thjc fig. 10 - on-state power loss characteristics 0 255075100125 maximum allowable ambient temperature (c) r = 0 . 5 k / w - d e l t a r t h s a 1 k / w 1 . 5 k / w 2 k / w 2 .5 k / w 3 k / w 4 k / w 5 k / w 7 k / w 1 0 k / w 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 rms limit conduction angle 180 120 90 60 30 maximum average on-state power loss (w) average on-state current (a) 22ria series (1400 to 1600v) t = 125c j
22ria series bulletin i2403 rev. a 07/00 8 www.irf.com fig. 12 - maximum non-repetitive surge current fig. 13 - maximum non-repetitive surge current fig. 14 - forward voltage drop characteristics fig. 11 - on-state power loss characteristics 140 160 180 200 220 240 260 280 300 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) at any rated load condition and with rated v applied following surge. rrm initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j 22ria series (1400 to 1600v) 120 140 160 180 200 220 240 260 280 300 320 340 0.01 0.1 1 peak half sine wave on-state current (a) pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial t = 125c no voltage reapplied rated v reapplied rrm j 22ria series (1400 to 1600v) 1 10 100 1000 0123456 t = 25c j instantaneous on-state current (a) instantaneous on-state voltage (v) 22ria series (1400 to 1600v) t = 125c j 0255075100125 maximum allowable ambient temperature (c) r = 0 . 5 k / w - d e l t a r t h s a 1 k / w 1 . 5 k / w 2 k / w 2 . 5 k / w 3 k / w 4 k / w 5 k / w 7 k / w 1 0 k / w 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) 22ria series (1400 to 1600v) t = 125c j
22ria series bulletin i2403 rev. a 07/00 9 www.irf.com fig. 15 - thermal impedance z thjc characteristics fig. 16 - gate characteristics 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) 22ria series thjc transient thermal impedance z (k/w) steady state value r = 0.86 k/w (dc operation) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for rectangular gate pulse tr<=1 s, tp >= 6 s rated di/dt : 10v, 20ohms <=30% rated di/dt : 10v, 65ohms (1) pgm = 16w, tp = 4ms (2) pgm = 30w, tp = 2ms (3) pgm = 60w, tp = 1ms (4) pgm = 60w, tp = 1ms tr <=0.5 s, tp >= 6 s (3) (4) tj = -65 c tj = 25 c tj = 125 c 22ria series frequency limited by pg(av) world headquarters: 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. european headquarters: hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. ir canada: 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. ir germany: saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. ir italy: via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. ir southeast asia: 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. ir taiwan: 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change without notice.
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